Перегляд за автором "Boiko, I.I."

Сортувати за: Порядок: Результатів:

  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently ...
  • Electron-electron drag in crystals with multivalley band 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer ...
  • Impurity scattering of band carriers 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of ...
  • Influence of electron-electron drag on piezoresistance of n-Si 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the ...
  • Influence of field dependent form of collision integral on kinetic coefficients 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that ...
  • Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the ...
  • Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a ...
  • Instability of 2DEG interacting with drifting 3DEG 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Dispersion law is studied for high-frequency longitudinal plasma waves in 2DEG (the plane z = 0), separated by thin dielectric layer from half-limited 3DEG. It is shown that drift of 3DEG provokes for special conditions ...
  • Investigation of the photoelastic effect in si at high values of the absorptivity 
    Boiko, I.I.; Venger, Ye.F.; Nikitenko, E.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band ...
  • Specific thermoemf and Hall-effect in crystals with monopolar conductivity 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The Seebeck coefficient α and Hall constant RH are calculated for monopolar crystal as based of quantum kinetic equation. It is shown that α and RH in the case of simple isotropic band do not depend on relaxation ...
  • Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility ...